Molecular hydrogen diffusion in nanostructured amorphous silicon thin films

Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2 thin films on silicon

When metal/oxide/silicon (MOS) devices are subjected to ionizing radiation, hot carrier damage, or any process in which charge carriers are present in the oxide, interface states are created at the Si/SiO, interfaceelm The presence of holes in the oxide is most effective in triggering the interface state generation process.879 Studies of the transient response of irradiated devices shows that m...

Structural origins of intrinsic stress in amorphous silicon thin films

Eric Johlin,1,* Nouar Tabet,2 Sebastián Castro-Galnares,1 Amir Abdallah,3 Mariana I. Bertoni,1 Tesleem Asafa,2 Jeffrey C. Grossman,1 Syed Said,2 and Tonio Buonassisi1,† 1Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA 2King Fahd University of Petroleum and Minerals, Dhahran 31261, Saudi Arabia 3King Fahd University of Petroleum and Minerals, Center of Research Excelle...

Thermopower of nanocrystalline germanium/hydrogenated amorphous silicon composite thin films

Surface smoothening mechanism of amorphous silicon thin films.

An important concern in the deposition of thin hydrogenated amorphous silicon () films is to obtain smooth surfaces. Herein, we combine molecular-dynamics simulations with first-principles density functional theory calculations to elucidate the smoothening mechanism of plasma deposited thin films. We show that the deposition precursor may diffuse rapidly on the film surface via overcoordinated ...

Characterization of Amorphous Silicon Thin Films and PV Devices